Chemical mechanical planarization for Ta-based superconducting quantum devices
نویسندگان
چکیده
We report on the development of a chemical mechanical planarization (CMP) process for thick damascene Ta structures with pattern feature sizes down to 100 nm. This CMP is core fabrication sequence scalable superconducting integrated circuits at 300 mm wafer scale. work has established elements various CMP-related design rules that can be followed by designer layout include Ta-based coplanar waveguide resonators, capacitors, and interconnects tantalum-based qubits single flux quantum circuits. The these utilizes 193 nm optical lithography along tools dielectric deposition, reactive ion etch, wet-clean, CMP, in-line metrology—all typical CMOS foundry. Theprocess was guided measurements physical electrical characteristics planarized structures. Physical characterization such as atomic force microscopy across surface showed local topography less than 5 Electrical confirmed low leakage room temperature, 12% within sheet resistance variation line widths ranging from 3 μm. Run-to-run reproducibility also evaluated. Effects integration choices including deposited thickness are discussed.
منابع مشابه
Yield improvement of chemical mechanical planarization processes
Eamkajornsiri, Sutee, "Yield improvement of chemical mechanical planarization processes " (2005). Retrospective Theses and Dissertations. Paper 3043. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleed-through, substandard margins, and improper alignment can adversely...
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ژورنال
عنوان ژورنال: Journal of vacuum science and technology
سال: 2023
ISSN: ['2166-2746', '2166-2754']
DOI: https://doi.org/10.1116/6.0002586